Cree

Cree is a leading supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices for wireless communications.
Typical applications include
2-Way, Private Radio Broadband Amplifiers
Cellular Infrastructure
Test Instrumentation
Class A, AB, Linear Amplifiers Suitable with OFDM, W CDMA, Edge, CDMA Wave Forms Cree wireless devices are especially well-suited for high-power communications because of the material we use, silicon carbide (SiC).


SiC MESFET Products 

Cree's CRF24010 is a silicon carbide (Sic) RF power Metal-Semiconductor Field-Effect Transistor (MESFET). Sic has superior properties compared to silicone or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
see also: CRF24010, CRF24060D, CRF24060

GaN HEMT Products for WiMAX Applications

Cree's CGH27015 is a gallium nitride (Gan) high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes CGH27015 ideal for 2.3 to 2.9Ghz WiMAX and BWAamplifier applications. The transistor is available in both screw-down, flange and solder-down, pill packages.
see also:
CGH27030F, CGH27060F, CGH35015, CGH35030F, CGH35060F, CGH55015F,
CGH55030F

GaN HEMT Products for General-Purpose Applications 

Cree's CGH40010 is an unmatched, gallium nitride (Gan) high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications .GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40010 ideal for linear and compressed amplifier circuits. The transistor is available in both screw-down, flange and solder-down, pill packages.

see also: CGH40025, CGH40035, CGH40045, CGH40090PP, CGH40120F

GaN HEMT MMIC Products 

Cree's CMPA0060002F is a gallium nitride (Gan) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidth compared to Si and GaAs transistors. This MMIC employs a distributed amplifier design approach, enabling extremely wide bandwidths to be achieved in a small footprint screw-down package featuring a cooper-tungsten heat sink.  
see also:
CMPA2560025F

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